Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I-V, C-V-f and G/ω-V-f techniques 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I-V, C-V-f and G/ω-V-f techniques

摘要：
收稿时间：	2009-03-16
修稿时间：	2009-04-27
本文献已被 ScienceDirect 等数据库收录！