| 微腔调制常温Ge量子点光致发光特性 |
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| 引用本文： | 李传波,毛容伟,左玉华,成步文,余金中,王启明.微腔调制常温Ge量子点光致发光特性[J].半导体学报,2005,26(13):20-23. |
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| 作者姓名： | 李传波 毛容伟 左玉华 成步文 余金中 王启明 |
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| 作者单位： | 中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083 |
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| 摘 要： | 报道了微腔对Ge量子点常温光致发光的调制特性. 生长在SOI硅片上的Ge量子点的常温光致发光呈多峰分布，随波长增加，峰与峰之间的间隔增加. 这种多峰结构与SOI硅片所形成的微腔有关，只有满足特定波长的光致发光才能透出腔体并被探测器搜集. 模拟结果与实验结果吻合得很好，变功率实验也进一步证实了该结论.
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| 关 键 词： | 微腔 光致发光 Ge量子点 调制 |
Modulated Photoluminescence of Ge Quantum Dots Grown on SOI Substrate |
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| Li Chuanbo,Mao Rongwei,Zuo Yuhu,Cheng Buwen,Yu Jinzhong and Wang Qiming.Modulated Photoluminescence of Ge Quantum Dots Grown on SOI Substrate[J].Chinese Journal of Semiconductors,2005,26(13):20-23. |
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| Authors: | Li Chuanbo Mao Rongwei Zuo Yuhu Cheng Buwen Yu Jinzhong and Wang Qiming |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | Modulated photoluminescence(PL) of the Ge/Si quantum dots grown on SOI substrates is investigated.The PL spectrum presents multi-peak with different adjacent interval.With the increase of the wavelength,the interval increase.Simulation result indicates that the cavity formed by the mirrors at the surface and the buried SiO2 interface has a modulation effect on the luminescence.And the independence of the peak position on the exciting power also suggests this cavity effect. |
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| Keywords: | modulation Ge room temperature PL silicon on insulator |
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