| 氮化镓材料中的位错对材料物理性能的影响 |
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| 引用本文： | 倪贤锋,叶志镇.氮化镓材料中的位错对材料物理性能的影响[J].材料导报,2003,17(11):9-12. |
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| 作者姓名： | 倪贤锋 叶志镇 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，G20000683-06， |
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| 摘 要： | 氮化镓材料中的位错是制约GaN发光器件及电子器件的性能的一个关键因素。目前对于氮化镓材料中的位错的研究是一大热点。扼要综述了位错对于材料及器件的物理性能的影响：非辐射复合作用、造成器件的漏电流、缩短器件的寿命。并简要介绍了减少GaN外延层中的位错密度的几种方法。
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| 关 键 词： | 氮化镓材料 物理性能 位错 GaN 半导体材料 |
Influence of Threading Dislocations on Physical Properties of GaN Epilayers |
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| NI Xianfeng YE Zhizhen.Influence of Threading Dislocations on Physical Properties of GaN Epilayers[J].Materials Review,2003,17(11):9-12. |
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| Authors: | NI Xianfeng YE Zhizhen |
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| Abstract: | High-density threading dislocations (TD) as NR recombination centers have been one of the key
factors limiting the internal quantum efficiency of radiative devices (eg. LEDs) and the performance of related electronic devices. In this article the influences of TD on the physical properlies of related devices are briefly reviewed.as well as some promising techniques to reduce the density of TD in GaN epilayers. |
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| Keywords: | GaN thin films threading dislocations non-radiative recombination centers leakage current |
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