| 1.55μm张应变InGaAsP/InGaAsP量子阱偏振不灵敏半导体光放大器的优化设计 |
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| 引用本文： | 邱伟彬,何国敏,董杰,王圩.1.55μm张应变InGaAsP/InGaAsP量子阱偏振不灵敏半导体光放大器的优化设计[J].半导体学报,2003,24(1). |
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| 作者姓名： | 邱伟彬 何国敏 董杰 王圩 |
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| 作者单位： | 1. 中国科学院半导体研究所,国家光电子工艺中心,北京,100083
2. 厦门大学物理系,厦门,361005 |
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| 摘 要： | 优化设计了1.55μm InGaAsP/InGaAsP张应变量子阱偏振不灵敏半导体光放大器的结构.利用k*p方法计算了多量子阱的价带结构,计算中考虑了6×6有效质量哈密顿量.从阱宽、应变、注入载流子密度等方面计算了量子阱模式增益的偏振相关性.
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| 关 键 词： | 半导体光放大器 偏振不灵敏 多量子阱 |
Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μm Polarization Independent Semiconductor Optical Amplifier |
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| Qiu Weibin,He Guomin,Dong Jie,Wang Wei.Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μm Polarization Independent Semiconductor Optical Amplifier[J].Chinese Journal of Semiconductors,2003,24(1). |
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| Authors: | Qiu Weibin He Guomin Dong Jie Wang Wei |
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| Abstract: | The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.55μm windows polarization-independent semiconductor optical amplifier is reported.The valence-band structure of the MQW is calculated by using k*p method,in which 6×6 Luttinger effective-mass Hamiltonian is taken into account.The polarization dependent optical gain is calculated with various well width,strain,and carrier density. |
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| Keywords: | semiconductor optical amplifier polarization independence MQW |
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