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| MPCVD中基片加热材料的温度场摄动模型研究 | |
| 引用本文： | 杨春山,傅文斌,周璧华.MPCVD中基片加热材料的温度场摄动模型研究[J].电波科学学报,2002,17(5):495-498. |
| 作者姓名： | 杨春山 傅文斌 周璧华 |
| 作者单位： | 1. 解放军理工大学工程兵工程学院电磁脉冲室,江苏,南京,210007；空军雷达学院,湖北,武汉，430010 2. 空军雷达学院,湖北,武汉，430010 3. 解放军理工大学工程兵工程学院电磁脉冲室,江苏,南京,210007 |
| 摘 要： | 为改进微波等离子体化学气相沉积（MPCVD）装置中的加热系统，提出了用基片加热材料替代常规加热方式的新的技术路线，建立了基片加热材料的微波轴对称温度场模型并得到了一般解，通过对基片加热材料的微波设计，在MPCVD装置中获得大片基片台直径的均匀温度分布区。 |
| 关 键 词： | MPCVD 温度场 基片加热材料 化学气相沉积 微波等离子体化学气相沉积 摄动技术 |
| 文章编号： | 1005-0388(2002)05-0495-04 |
Study on perturbation model of substrate heating materials' temperature fields in MPCVD |
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| YANG Chun-shan , FU Wen-bin ZHOU Bi-hua.Study on perturbation model of substrate heating materials'''' temperature fields in MPCVD[J].Chinese Journal of Radio Science,2002,17(5):495-498. | |
| Authors: | YANG Chun-shan FU Wen-bin ZHOU Bi-hua |
| Affiliation: | YANG Chun-shan 1,2 FU Wen-bin 2 ZHOU Bi-hua 1 |
| Abstract: | In order to improve the heating system in microwave plasma chemical vapor deposition device, a new technique line is presented, namely, substitutes substrate heating material for ordinary heating methods. A microwave axial symmetry temperature field model is presented and its general solution is also obtained. By microwave designing for substrate heating materials, the larger uniform temperature field areas than the diameter of substrate holder in MPCVD device is obtained. |
| Keywords: | substrate heating material chemical vapor deposition (CVD) microwave plasma chemical vapor deposition (MPCVD) perturbation technique |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |