直拉硅单晶生长的现状与发展

综述了制造集成电路(IC)用直拉硅单晶生长的现状与发展．对大直径生长用磁场拉晶技术，硅片中缺陷的控制与利用(缺陷工程)，大直径硅中新型原生空位型缺陷，硅外延片与SOI片，太阳电池级硅单和大直径直拉硅生长的计算机模拟，硅熔体与物性研究等进行了论述．

Progress in Czochralski Silicon Growth

The recent development in the development of the growth of Czochralski silicon single crystals for fabricating of the integrated circuit was reviewed .The magnetic field technology that pulls large diameter silicon single crystal, the control and utilization of defects in the silicon wafer, the grown-in void defects in large diameter silicon single crystals, the silicon epitaxial wafer and SOI wafer, the analog computation of the growth of large diameter silicon single crystal and solar cell silicon single crystal and the research of silicon melt and its physical property were discussed.