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A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects |
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| Authors: | X. Zhou S.B. Chiah K.Y. Lim |
| Affiliation: | aSchool of Electrical and Electronic Engineering, Nanyang Technological University, South Spine, Block S1, 50 Nanyang Avenue, Singapore 639798, Singapore bChartered Semiconductor Manufacturing Limited, 60 Woodlands Industrial Park D, Street 2, Singapore 738406, Singapore |
| Abstract: | A compact Ids model with physical drain-conductance (gds) modeling for deep-submicron MOSFETs is formulated based on first-principle momentum-/energy-balance equations, which simultaneously includes the hot-electron and thermoelectric effects in a unified compact form with two fitting parameters and one-step extraction. The model has been verified with 0.18-μm experimental data with good gds prediction. |
| Keywords: | Drain conductance Compact model MOSFET Velocity overshoot Thermoelectric effect |
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