| 质子引入的6T SRAM单粒子翻转截面预测模型 |
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| 引用本文： | 李磊,周婉婷.质子引入的6T SRAM单粒子翻转截面预测模型[J].固体电子学研究与进展,2012,32(1):6-9,87. |
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| 作者姓名： | 李磊 周婉婷 |
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| 作者单位： | 电子科技大学电科院 成都 611731 |
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| 摘 要： | 提出了一种基于SOI工艺6T SRAM单元质子辐射的单粒子饱和翻转截面的预测模型,该模型通过器件物理来模拟辐照效应,利用版图和工艺参数来预测质子引入的单粒子饱和翻转截面。该模型采用重离子的SPICE测试程序对质子辐射的翻转截面进行预测,该方法简单高效,测试实例表明在0.15μm SOI工艺下,预测的质子引入的单粒子翻转饱和截面和实际测试的翻转截面一致。
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| 关 键 词： | 质子 静态存储器 绝缘体上硅 翻转截面 线性传输能量 |
Proton Induced Upset Cross Section Predictive Modeling for 6T SRAMs |
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| LI Lei
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ZHOU Wanting.Proton Induced Upset Cross Section Predictive Modeling for 6T SRAMs[J].Research & Progress of Solid State Electronics,2012,32(1):6-9,87. |
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| Authors: | LI Lei ZHOU Wanting |
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| Affiliation: | (Research Institute of Electronic Science and Technology,University of Electronic Science and Technology of China,Chengdu,611731,CHN) |
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| Abstract: | In this paper,a modeling for predicting the saturated proton upset cross section for 6T SOI SRAM cells from layout and technology parameters is proposed.The modeling calculates the cross section to heavy ions based on device physics by SPICE simulations to predict the saturated proton upset cross section for 6T SRAM cells.The predicted upset cross section is in good agreement with test results for 6T SRAM cells processed using 0.15 μm SOI process technology. |
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| Keywords: | proton SRAM silicon-on-insulator(SOI) cross section linear transfer energy |
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