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| ICP刻蚀GaN侧壁倾角以及刻蚀速率的控制 | |
| 引用本文： | 王玮,蔡勇,张宝顺,黄伟,李海鸥.ICP刻蚀GaN侧壁倾角以及刻蚀速率的控制[J].固体电子学研究与进展,2012,32(3):219-224. |
| 作者姓名： | 王玮 蔡勇 张宝顺 黄伟 李海鸥 |
| 作者单位： | 1. 中国科学院苏州纳米技术与纳米仿生研究所,江苏,苏州,215123;中国科学院研究生院,北京,100049;中国科学院半导体研究所,北京,100083 2. 中国科学院苏州纳米技术与纳米仿生研究所,江苏,苏州,215123 3. 无锡晶凯科技有限公司,江苏,无锡,214061 |
| 基金项目： | 国家自然科学基金资助项目，江苏省自然科学基金资助项目 |
| 摘 要： | 深入研究了Cl2基气体电感耦合等离子体(ICP)刻蚀系统对于GaN材料侧壁倾角的控制以及刻蚀速率的影响。通过调整ICP离子源功率、射频功率、气体流量、腔室压力等参数,经实验验证,实现了从23°～83°侧壁倾角的大范围工艺控制,为GaN基器件工艺提供了有益指导。 |
| 关 键 词： | 电感耦合等离子体 刻蚀 氮化镓 侧壁倾角 射频功率 |
Control of Inductively Coupled Plasma Etching GaN Sidewall Profiles and Etch Rate |
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| WANG Wei , CAI Yong , ZHANG Baoshun , HUANG Wei , LI Haiou.Control of Inductively Coupled Plasma Etching GaN Sidewall Profiles and Etch Rate[J].Research & Progress of Solid State Electronics,2012,32(3):219-224. | |
| Authors: | WANG Wei CAI Yong ZHANG Baoshun HUANG Wei LI Haiou |
| Affiliation: | 1 Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Science,Suzhou,Jiangsu,215123,CHN)(2 Institute of Semiconductors,Chinese Academy of Science,Beijing,100083,CHN)(3 WuXi Jingkai Technology Co.,Ltd,Wuxi,Jiangsu,214061,CHN)(4 Graduate University of the Chinese Academy of Sciences,Beijing,100049,CHN) |
| Abstract: | Sidewall profiles and etch rate of dry etched GaN mesas were investigated by using a chlorine based inductively coupled plasma(ICP) system.The process conditions were carefully selected by changing ICP ion source power,RF power,gas flow,and chamber pressure.The experimental results show that a very wide sidewall profile angle could be achieved from 23° to 83° at certain optimized conditions,which provide a helpful process guideline for fabricating GaN based devices. |
| Keywords: | ICP etch GaN sidewall slope RF power |
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