| GaAs近红外吸收特性和主要深电子陷阱浓度的测量 |
| |
| 引用本文： | 杨瑞霞,李光平,王琴.GaAs近红外吸收特性和主要深电子陷阱浓度的测量[J].河北工业大学学报,1991(2). |
| |
| 作者姓名： | 杨瑞霞 李光平 王琴 |
| |
| 作者单位： | 河北工学院电气工程系，河北工学院电气工程系，天津电子材科研究所 |
| |
| 摘 要： | 本文研究液封直拉(LEC)未掺杂半绝缘GaAs室温和低温近红外吸收特性,对主要深电子陷阱(EL2)引起红外吸收的机理进行了探讨。利用低温高分辩率技术,发现样品中EL2内部跃迁特征谱及由零声子线和五个声子耦合峰组成的精细结构。零声子线与近红外吸收带具有相同的光淬灭效应,其强度与EL2浓度具有良好的线性关系,由此阐述了一种测定EL2浓度的新方法。
|
| 关 键 词： | 主要深电子陷阱 近红外吸收 半绝缘 GaAs 零声子线 跃迁 光淬灭 精细结构 分辩率 |
The Characteristics of Near-infrared Absorptionin GaAs and the Measurement of the Concentration ofthe Main Deep Electron Trap |
| |
| Yang Ruixia Li Guangping WangQin.The Characteristics of Near-infrared Absorptionin GaAs and the Measurement of the Concentration ofthe Main Deep Electron Trap[J].Journal of Hebei University of Technology,1991(2). |
| |
| Authors: | Yang Ruixia Li Guangping WangQin |
| |
| Affiliation: | Yang Ruixia Li Guangping WangQin |
| |
| Abstract: | The near-infrared characteristics at room temperature and low temperature of the fluid encapsulated CZO kralski (LEC) undoped semi-insulating GaAs have been studied, and the mechanism of main deep electron trap(EL2) which causes infrared absorption has also been investigated. By using a low temperature high resolution technique, the EL2 intraccnter transition characteristic band, and the fine structure composed of zero-phonon line and five phonon coupling peaks have been found in the sample, zero-phonon line and the near-infrared absorption band have the same photo-quenching effect. There is an excellent linear relation between its intensity and EL2 concentration. Thus, a new method for determining EL2 concentration is provided. |
| |
| Keywords: | Main deep electron trap Infrared absorption Semi-insulatingGaAs Zero-phonon line transition photo puenching Fine structure Resolution |
| 本文献已被 CNKI 等数据库收录！ |
