用深能级瞬态谱法测量GaAS MESFET中的深能级

本文介绍了用深能级瞬态谱(DLTS)法测量GaAs MESFET的深能级杂质和缺陷。在有源层中一般没有测到深能级杂质和缺陷,但在有源层与缓冲层界面附近测到了多个空穴陷阱和电子陷阱。其中空穴陷阱的能级有0.41eV、0.53eV、0.68eV、0.91eV;电子陷阱的能级有0.30eV、0.44eV、0.84eV。并对部分陷阱的性质作了初步的讨论。

Measurement of Deep Levels in GaAs MESFET Using Deep Level Transient Spectroscopy

In this paper the deep level transient cpectroscopy (DLTS) is used to measure the deep level impurities and defects of GaAs MESFET. Generally, deep level impurities and defects are not found in the active layere; but a few hole and electron traps are detected in the vicinity of the interface between the active and buffer layers. The levels of the hole traps are measured to be 0.41eV, 0.53eV, 0.68eV and 0.91eV; the levels of the electron trape are 0.30eV, 0.44eV and 0.84eV. A preliminary discussion about properites of some traps is given.