Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately doped body |
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Authors: | Kyung Rok Kim Dae Hwan Kim Suk-Kang Sung Jong Duk Lee Byung-Gook Park |
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Affiliation: | Sch. of Electr. Eng., Seoul Nat. Univ., South Korea; |
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Abstract: | Negative-differential transconductance characteristics at room temperature with a peak-to-valley ratio of about two were observed in 30-nm square-channel silicon-on-insulator nMOSFETs with degenerately doped bodies. High channel-doping concentration creates the degeneracy in the p-type body of the self-aligned SOI MOSFET and consequently, enables band-to-band tunneling between degenerate body and source-drain. I/sub DS/-V/sub DS/ curves in the negative drain bias region also show band-to-band tunneling current as in the case of forward-biased p-n tunnel junctions. |
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