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Optical effects caused by high laser powers in ion-implanted Bi4Ge3O12 waveguides
Authors:X. Huang  D. Jaque  F. Vereda  B. Fonrobert  P. J. Chandler  P. D. Townsend
Affiliation:Physics Department , University of Sussex , Falmer, Brighton, BN1 9QH, UK
Abstract:Abstract

The ‘optical writing’ of permanent channel waveguides in the surface of He+ ion-implanted bismuth germanate, Bi4Ge3O12, has been studied, using end-coupled argon and Ti:sapphire CW laser beams. Comparisons of the self-focusing effect in waveguides and bulk samples have been made for both Nd3+ doped and undoped material. The permanent ‘writing’ effect has been compared with the structural change observed earlier in ion-implanted Bi4Ge3O12 waveguides annealed at high temperature.
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