首页 | 本学科首页   官方微博 | 高级检索  
     


Thermal instabilities in semiconductor amplifiers
Authors:Lorenzo Spinelli  Giovanna Tissoni  Luigi A Lugiato  Massimo Brambilla
Affiliation:1. Dipartimento di Scienze Chimiche, Fisiche e Matematiche, Università dell'Insubria, via Valleggio 11, 22100 Como, Italy;2. INFM, Dipartimento di Fisica Interateneo, Università e Politecnico di Bari, via Orabona 4, 70126 Bari, Italy
Abstract:We introduce here a model which includes the thermal dynamics in the time evolution of a semiconductor multiple quantum well microresonator, driven by a coherent holding beam. The active layer is electrically pumped, in order to obtain population inversion, but it is maintained below the lasing threshold. We show that the inclusion of thermal effects introduces a Hopf instability which may dominate the dynamical behaviour of the system in some operational regimes. In those cases our numerical simulations show that both spatial patterns and cavity solitons perform a drift motion in the transverse direction. This motion develops over the slow time scale which characterizes thermal effects.
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号