Dependence of coupling coefficient and lasing wavelength on injection current in pure gain-coupled distributed feedback semiconductor lasers |
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Authors: | Maryam Aliannezhadi Vahid Ahmadi |
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Affiliation: | 1. Department of Physics , Alzahra University , Tehran, Iran;2. Department of Electrical Engineering , Tarbiat Modares University , Tehran, Iran |
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Abstract: | A theoretical analysis of purely gain-coupled distributed feedback lasers (PGC-DFB) with antireflection facets is given. The effects of longitudinal non-uniformity of photon and carrier density above a threshold circumstance are considered. In addition, the influence of carrier-induced refractive index change on the coupling coefficient of the PGC-DFB structure is assumed. It is shown that the coupling coefficient in this structure varies with injected current and it gets a real part or an index coupled term. As a result the normalized coupling coefficient, κL, becomes a complex number. So, above the threshold condition, the PGC-DFB laser operates like a complex coupled one. Variation of the oscillation wavelength and the threshold gain of the PGC-DFB laser in terms of current is analyzed too. Numerical analysis shows that this structure has wavelength tunability with respect to current. The theoretical model is based on the self-consistent solution of coupled wave equations and the carrier rate equation by the transfer matrix method. |
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Keywords: | DFB laser pure gain-coupled semiconductor laser |
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