Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells |
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Authors: | G Coudenys I Moeeman G Vermeire F Vermaerke Y Zhu P Van Daele P Demeester E Maayan B Elsner J Salzman E Finkman |
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Affiliation: | (1) Department of Information Technology, University of Gent-IMEC, SintPietersnieuwstraat 41, B-9000 Gent, Belgium;(2) Israel Institute of technology, 32000 Technion City, Haifa, Israel;(3) RWTH, Institute of Semiconductor Electronics, D-5100 Aachen, Germany |
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Abstract: | The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate
during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of
photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate.
Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials.
Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked
channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor
pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow
mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore,
we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible
for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth. |
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Keywords: | InGaAs(P)/InP (In)GaAs/(Al)GaAs Shadow masked MOVPE |
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