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Rapid thermal annealing of arsenic implanted relaxed Si1−xGex |
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| Authors: | A Nylandsted Larsen S Yu Shiryaev P Gaiduk V S Tishkov |
| Affiliation: | a Institute of Physics and Astronomy, University of Aarhus, DK-8000, Aarhus C, Denmark b The Institute for Physics Problems, Belorussian State University, Kurchatov str. 7, 220106, Minsk, Belarus |
| Abstract: | The electrical activity and redistribution during rapid thermal annealing (RTA) of high concentrations of As implanted into epitaxially grown, relaxed Si1−xGex for x≤0.5 have been studied as a function of composition x and RTA parameters. At a given RTA temperature the maximum carrier concentration decreases and the redistribution increases with increasing x. Maximum carrier concentrations and junction depths as a function of composition and RTA parameters are given. |
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