Low-temperature process to increase the grain size in polysilicon films |
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| Authors: | Reif R. Knott J.E. |
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| Affiliation: | Massachusetts Institute of Technology, Department of Electrical Engineering & Computer Science, Cambridge, USA; |
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| Abstract: | The letter describes a novel process for increasing the grain size in polycrystalline silicon films at temperatures near 500°C. This process, once perfected, could lead to mono-crystalline or large-grain, uniformly oriented polysilicon films on amorphous surfaces. |
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