The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors |
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| Authors: | Changhyun Yi Robert A Metzger April S Brown |
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| Affiliation: | (1) Microelectronics Research Center, School of Electrical and Computer Engineering, Georgia Institute of Technology, 30332-0250 Atlanta, GA |
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| Abstract: | Strained AlxIn1−xAs/Ga0.47In0.53As heterojunction N-p+ diodes and heterojunction bipolar transistors (HBTs) have been grown on InP substrates by solid-source molecular-beam epitaxy,
fabricated, and characterized. To determine the effects of the conduction-band discontinuity at the emitter-base heterojunction
on turn-on voltage and ideality factor, a strained Al0.7In0.3As layer is inserted in the emitter near the base. Changes in transport across the junction are observed as a function of
the strained-layer position and thickness. These results were used to implement strained emitter HBTs. |
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| Keywords: | HBT pseudomorphic InP GaInAs AlInAs solid-source molecular-beam epitaxy (SSMBE) |
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