Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules |
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| Affiliation: | 1. Engineering Product Development Pillar, Singapore University of Technology and Design, 487372, Singapore;2. State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China;1. Centre of Reliable Power Electronics (CORPE), Department of Energy Technology, Aalborg University, Pontoppidanstraede 111, 9220 Aalborg, Denmark;2. ABB Switzerland Ltd. Semiconductors, CH-5600 Lenzburg, Switzerland;1. Semiconductor Devices, Berlin University of Technology (TUB), Sekr. E4, Einsteinufer 19, 10587 Berlin, Germany;2. Hamamatsu Photonics KK, 325-6, Sunayama-cho, Naka-ku, Hamamatsu, Shizuoka Pref. 430-8587, Japan;1. Laboratoire IMS, University of Bordeaux, Talence, France;2. Microsemi, Bruges, France;3. Alpha, NJ, USA;1. Center of Reliable Power Electronics (CORPE), Department of Energy Technology, Aalborg University, Pontoppidanstraede 101, 9220 Aalborg, Denmark;2. DIEI, University of Cassino and Southern Lazio, Via G. Di Biasio 43, 03043 Cassino, Italy |
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| Abstract: | In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation. |
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