| ZnO:Sn/Ag/ZnO:Sn复合薄膜电极的防氧化性能研究 |
| |
| 引用本文： | 李昱,袁军林,翁卫祥,吴朝兴,贾贞,郭太良.ZnO:Sn/Ag/ZnO:Sn复合薄膜电极的防氧化性能研究[J].真空科学与技术学报,2011(3):258-261. |
| |
| 作者姓名： | 李昱 袁军林 翁卫祥 吴朝兴 贾贞 郭太良 |
| |
| 作者单位： | 福州大学物理与信息工程学院; |
| |
| 基金项目： | 福州大学博士基金项目(No.826768); 国家“863”计划重大专项(2008AA03A313); 福建省教育厅资助项目(JA09017) |
| |
| 摘 要： | 随着分辨率的提高,传统金属电极在电阻率和抗氧化性能方面已经不适合作为需要高温热处理的场致发射显示器件中的薄膜电极。本文采用5.77%(原子比)Sn掺杂的ZnO:Sn作为Ag层的保护层,利用磁控溅射法制备ZnO:Sn/Ag/ZnO:Sn复合薄膜及其电极,并采用X射线衍射、光学显微镜、扫描电子显微镜和电性能测试系统研究复合薄膜及其电极在经过不同温度退火后的晶体结构、表面形貌和电学性能的变化。ZnO:Sn膜层致密,25 nm厚的ZnO:Sn足以保护Ag层在530℃的高温中不被明显氧化,电极电阻率低达2.0×10-8Ω.m左右。
|
| 关 键 词： | ZnO:Sn 薄膜电极 抗氧化 电阻率 |
Growth and Oxidation Resistance of ZnO:Sn/Ag/ZnO:Sn Composite Film Electrodes |
| |
| Li Yu,Yuan Junlin,Weng Weixiang,Wu Chaoxing,Jia Zhen,Guo Tailiang.Growth and Oxidation Resistance of ZnO:Sn/Ag/ZnO:Sn Composite Film Electrodes[J].JOurnal of Vacuum Science and Technology,2011(3):258-261. |
| |
| Authors: | Li Yu Yuan Junlin Weng Weixiang Wu Chaoxing Jia Zhen Guo Tailiang |
| |
| Affiliation: | Li Yu,Yuan Junlin,Weng Weixiang,Wu Chaoxing,Jia Zhen,Guo Tailiang (College of Physics and Information Engineering,Fuzhou University,Fuzhou 350002,China) |
| |
| Abstract: | The composite ZnO:Sn layers with high oxidation resistance were grown by DC reactive magnetron sputtering to protect the conventional metallic electrodes widely used in field emission device fabrication.The impacts of film growth conditions on the properties of the ZnO:Sn/Ag/ZnO:Sn electrode were studied.The microstructures of the ZnO:Sn/Ag/ZnO:Sn layers,before and after annealing,were characterized with X-ray diffraction,scanning electron microscopy and an optical microscope.The results show that under opt... |
| |
| Keywords: | ZnO:Sn Thin film electrode Oxidation resistance Electrical resistivity |
| 本文献已被 CNKI 等数据库收录！ |
|
