| GaSb基光泵浦半导体碟片激光器的研究进展(特邀) |
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| 引用本文： | 尚金铭,张宇,杨成奥,谢圣文,黄书山,袁野,张一,邵福会,徐应强,牛智川.GaSb基光泵浦半导体碟片激光器的研究进展(特邀)[J].红外与激光工程,2018,47(10):1003004-1003004(9). |
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| 作者姓名： | 尚金铭 张宇 杨成奥 谢圣文 黄书山 袁野 张一 邵福会 徐应强 牛智川 |
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| 作者单位： | 1.中国科学院半导体研究所 半导体超晶格国家重点实验室,北京 100083; |
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| 基金项目： | 国家自然科学基金（61790580）;国家973计划（2014CB643903） |
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| 摘 要： | GaSb基光泵浦半导体碟片激光器（OP-SDLs）可以获得高光束质量和高功率的红外激光输出，是近年来新型中红外激光器件研究领域的热点。文中介绍了GaSb基光泵浦半导体碟片激光器增益芯片的外延结构和工作原理，综述了2 m波段GaSb基泵浦半导体碟片激光器的研究进展，讨论了该类激光器的波长扩展、功率提升、实现窄线宽短脉冲发射和有效热管理关键问题，评述了性能发展的主要技术方向和应用前景。
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| 关 键 词： | GaSb基光泵浦半导体碟片激光器 2 μm 热管理 高光束质量 |
| 收稿时间： | 2018-05-07 |
Research progress of GaSb based optically pumped semiconductor disk lasers (invited) |
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| Affiliation: | 1.State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;2.College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China |
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| Abstract: | GaSb based optically pumped semiconductor disk lasers (OP-SDLs) attracts considerable attention in novel mid-infrared laser device research field for their potential excellent beam quality and high output power. The epitaxy structure and basic principle of GaSb based OP-SDLs wafers were summarized. The development of GaSb based OP-SDLs at 2 m wavelength was reviewed respectively by analyzing the aspects of wavelength extending, power scaling, line-width narrowing, short-pulse generation and effective thermal management. The technical development direction and application prospects of this type of laser were discussed. |
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