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8-羟基喹啉铝本征薄膜的制备与性质研究
引用本文:李瑞东,刘雪凌,杨健.8-羟基喹啉铝本征薄膜的制备与性质研究[J].激光技术,2018,42(1):78-82.
作者姓名:李瑞东  刘雪凌  杨健
作者单位:防灾科技学院 基础课教学部, 三河 065201
摘    要:8-羟基喹啉铝属于有机半导体材料,在太阳能电池应用领域有较为广阔的应用前景。为了研究8-羟基喹啉铝载流子输运动力学信息,在恒温条件下制备了8-羟基喹啉铝薄膜,采用X射线衍射分析方法对薄膜的性质进行了分析,采用渡越时间方法对影响其载流子迁移率的实验条件进行了理论分析和实验验证。结果表明,在308K~338K温度范围内,8-羟基喹啉铝的载流子输运规律符合浅陷阱模型;取样电阻小于15kΩ及光脉冲能量低于3.5μJ时,载流子渡越时间保持恒定,测试结果可靠。这一结果对有机太阳能电池的制备是有帮助的。

关 键 词:光电子学    输运动力学    渡越时间方法    迁移率
收稿时间:2017-03-09

Preparation and study on characteristics of 8-hydroxy-quinoline aluminum film
Abstract:8-hydroxy quinoline aluminum is an organic semiconductor material and has broad application prospect in the field of solar cell application. In order to study the transport dynamic information of carriers, 8-hydroxyl quinoline aluminum thin film was prepared under the condition of constant temperature. The method of X-ray diffraction was used to analyze the properties of the film and the method of time-of-flight(TOF) was used to study the experimental conditions affecting the carrier mobility by theoretical analysis and experimental verification. The results show that this method is feasible. The carrier transport law of 8-hydroxy quinoline aluminum in the temperature range of 308K~338K is in accordance with shallow trap model. When the sampling resistance is less than 15kΩ and pulse energy is less than 3.5μJ, the carrier TOF remains constant. The test results are reliable. The result is helpful for the preparation of organic solar cells.
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