Pendeo-epitaxial growth of gallium nitride on silicon substrates |
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Authors: | Thomas Gehrke Kevin J Linthicum Edward Preble Pradeep Rajagopal Carsten Ronning Christian Zorman Mehran Mehregany Robert F Davis |
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Affiliation: | (1) Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC;(2) Department of Electrical, Systems and Computer Engineering and Science, Case Western Reserve University, Cleveland, OH |
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Abstract: | Pendeo-epitaxy (PE)1 from raised, 0001] oriented GaN stripes covered with silicon nitride masks has been employed for the growth of coalesced
films of GaN(0001) with markedly reduced densities of line and planar defects on Si(111)-based substrates. Each substrate
contained previously deposited 3C-SiC(111) and AlN(0001) transition layers and a GaN seed layer from which the stripes were
etched. The 3C-SiC transition layer eliminated chemical reactions between the Si and the NH3 and the Ga metal from the decomposition of triethylgallium. The 3C-SiC and the GaN seed layers, each 0.5 μm thick, were also
used to minimize the cracking and warping of the GaN/SiC/silicon assembly caused primarily by the stresses generated on cooling
due to the mismatches in the coefficients of thermal expansion. Tilting in the coalesced GaN epilayers of 0.2° was confined
to areas of lateral overgrowth over the masks; no tilting was observed in the material suspended above the trenches. The strong,
low-temperature PL band-edge peak at 3.456 eV with a FWHM of 17 meV was comparable to that observed in PE GaN films grown
on AlN/6H-SiC(0001) substrates. |
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Keywords: | Pendeo epitaxy lateral epitaxy gallium nitride (GaN) silicon substrates selective growth coalescence metalorganic vapor phase epitaxy (MOVPE) |
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