Electrical behaviour of the MnO2-doped ZnO-Bi2O3 system |
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| Authors: | Bi-Shiou Chiou Ming-Chih Chung |
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| Affiliation: | (1) Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan |
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| Abstract: | The electrical behaviour of xwt% MnO2-(100-x) (95wtx% ZnO-5wt% Bi2O3) is investigated. Addition of MnO2 retards grain growth in the ZnO-Bi2O3 system. It is observed that the MnO2 dopant decreases the leakage current, while it increases the non-linearity coefficient and the grain boundary resistance of ZnO-Bi2O3 ceramics. In addition, the noise spectrum of MnO2-doped ZnO-Bi2O3 deviates from 1/f behaviour. The deviation is, however, less enhanced for samples with more MnO2 dopant. |
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