| 硅光电负阻器件的构成原理与分类 |
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| 引用本文： | 郭维廉.硅光电负阻器件的构成原理与分类[J].固体电子学研究与进展,2002,22(1):120-126. |
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| 作者姓名： | 郭维廉 |
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| 作者单位： | 天津大学电子信息工程学院,300072 |
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| 基金项目： | 国家自然科学基金 (编号 694770 11)资助课题 |
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| 摘 要： | 将三端负阻器件与硅光电探测器相结合 ,通过新的构思成功地提出并构成了一类新型光电器件——硅光电负阻器件。文中报道了该器件构成的一般性原理 ,以及依据此构成原理确定的分类方法
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| 关 键 词： | 硅光电器件 负阻器件 光电逻辑器件 |
| 文章编号： | 1000-3819(2002)01-120-07 |
| 修稿时间： | 2000年3月13日 |
The Composition Principle and Classification of Silicon Photo-negative Resistance Devices |
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| GUO Weilian.The Composition Principle and Classification of Silicon Photo-negative Resistance Devices[J].Research & Progress of Solid State Electronics,2002,22(1):120-126. |
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| Authors: | GUO Weilian |
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| Abstract: | By combining the three terminal negative resistance devices and silicon photo detectors, the author of this paper has proposed and composed a novel category of optoelectronic devices--silicon photo negative resistance device successfully. In this paper, the general principle of composing the devices and the classfication of the devices have been described in detail. |
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| Keywords: | silicon optoelectronic devices negative resistance devices photoelectronic logical devices |
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