Synthesis of ZnTe nanowires onto TiO2 nanotubular arrays by pulse-reverse electrodeposition

Growth of ZnTe nanowires using a pulse-reverse electrodeposition technique from a non-aqueous solution is reported. ZnTe nanowires were grown on to an ordered nanotubular TiO₂ template in a propylene carbonate solution at 130 °C inside a controlled atmosphere glove box. The pulse-reverse electro deposition process consisted of a cathodic pulse at − 0.62 V and an anodic pulse at 0.75 V Vs Zn²⁺/Zn. Stoichiometry growth of crystalline ZnTe nanowires was observed in the as-deposited condition. The anodic pulse cycle of the pulse-reverse electrodeposition process presumably introduced zinc vacancies as deep level acceptors at an energy level of E_v + 0.47 eV. The resultant ZnTe nanowires showed p-type semiconductivity with a resistivity of 7.8 × 10⁴ Ω cm and a charge carrier density of 1.67 × 10¹⁴ cm^− 3. Annihilation of the defects occurred upon thermal annealing that resulted in marginal decrease in the defect density.