| 半导体封装行业中铜线键合工艺的应用 |
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| 引用本文： | 毕向东.半导体封装行业中铜线键合工艺的应用[J].电子与封装,2010,10(8):1-4,13. |
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| 作者姓名： | 毕向东 |
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| 作者单位： | 广东省粤晶高科股份有限公司,广州,510663 |
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| 摘 要： | 文章介绍了半导体封装行业中铜线键合工艺下,各材料及工艺参数(如框架、劈刀、设备参数、芯片铝层与铜材的匹配选择)对键合质量的影响,并总结提出如何更好地使用铜线这一新材料的规范要求。应用表明芯片铝层厚度应选择在0.025mm以上;劈刀应使用表面较粗糙的;铜线在键合工艺中使用体积比为95:5的氢、氮气混合保护气体;引线框架镀银层厚度应控制在0.03mm～0.06mm。
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| 关 键 词： | 铜线 引线键合 键合质量 工艺管控 |
Application of Copper Wire Bonding Technology in Semiconductor Packaging Industry |
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| BI Xiang-dong.Application of Copper Wire Bonding Technology in Semiconductor Packaging Industry[J].Electronics & Packaging,2010,10(8):1-4,13. |
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| Authors: | BI Xiang-dong |
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| Affiliation: | BI Xiang-dong (Guangdong Yuejing High-tech Co. Ltd,Guangzhou 510663,China) |
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| Abstract: | Copper wire bonding techniques in semiconductor packaging industry was introduced in this paper, including effects of material application conditions and processing parameters, such as lead frame, capillary, equipment parameter setup, and matching of die pad with copper wire on bonding quality. The process criterion was determined and seggested, which indicated that aluminum layer on die pad should be thicker than 0.025mm; capillary should be selected as the rougher surface; the volume proportion for protec... |
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| Keywords: | copper wire wire bonding bonding quality process control |
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