Effect of Nb2O5 seed layer on electrical properties of alkaline niobate based ferroelectric thin films

K_0.5Na_0.5NbO₃ and K_0.5Na_0.5Nb_0.995V_0.005O₃ ferroelectric thin films were prepared by a chemical solution deposition method. The Nb₂O₅ seed layer was introduced to investigate the electrical properties of the films. Crystalline structures and microstructures were analyzed by X-ray diffraction and scanning electron microscope at room temperature. The electrical properties were studied both for the films with and without Nb₂O₅ seed layer. It is found that the films' quality was modified by adding the seed layer, and the V-doping also plays an important role in improving the films quality. The ferroelectric and dielectric properties of the films were obviously enhanced by adding the seed layer, especially for the V-doped film. These results may be due to the better crystallization and microstructure of the films.