SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers |
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| Authors: | Thrivikraman T.K. Jiahui Yuan Bardin J.C. Mani H. Phillips S.D. Kuo W.-M.L. Cressler J.D. Weinreb S. |
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| Affiliation: | Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA; |
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| Abstract: | We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors' knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date. |
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