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| Studies on Dielectric Properties of Silicon Nitride at High Temperature | |
| 引用本文： | Ting Zhang Shu-Ren Zhang Meng-Qiang Wu Wei-Jun Sang Zheng-Ping Gao Zhong-Ping Li. Studies on Dielectric Properties of Silicon Nitride at High Temperature[J]. 中国电子科技, 2007, 5(4): 316-319 |
| 作者姓名： | Ting Zhang Shu-Ren Zhang Meng-Qiang Wu Wei-Jun Sang Zheng-Ping Gao Zhong-Ping Li |
| 作者单位： | [1]State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China （UESTC）, Chengdu, 610054, China [2]Beijing Aerospace Research Institutes of Materials and Processing Technology, Beijing, China |
| 摘 要： | In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li^＋, K^＋, Ca^2＋, Al^3＋ and Mg^2＋ doping on the dielectric properties of silicon nitride are also estimated. |
| 关 键 词： | 介电性能 杂质离子 氮化硅 高温性能 |
| 收稿时间： | 2007-08-15 |
| 修稿时间： | 2007-09-10 |
Studies on Dielectric Properties of Silicon Nitride at High Temperature |
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| Ting Zhang,Shu-Ren Zhang,Meng-Qiang Wu,Wei-Jun Sang,Zheng-Ping Gao,Zhong-Ping Li. Studies on Dielectric Properties of Silicon Nitride at High Temperature[J]. Journal of Electronic Science Technology of China, 2007, 5(4): 316-319 | |
| Authors: | Ting Zhang Shu-Ren Zhang Meng-Qiang Wu Wei-Jun Sang Zheng-Ping Gao Zhong-Ping Li |
| Abstract: | In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li , K , Ca2 , Al3 and Mg2 doping on the dielectric properties of silicon nitride are also estimated. |
| Keywords: | Dielectric properties impurity ion silicon nitride. |
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