| HgCdTe多载流子体系的迁移率谱分析 |
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| 引用本文： | 桂永胜,郑国珍.HgCdTe多载流子体系的迁移率谱分析[J].红外与毫米波学报,1998,17(5):327-332. |
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| 作者姓名： | 桂永胜 郑国珍 |
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| 作者单位： | 中国科学院上海技术物理研究所红外物理国家重点实验室 |
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| 摘 要： | 通过迁移率分析法对ＬＰＥ和ＭＢＥ生成的ｎ－ＨｇＣｄＴｅ样品进行了研究，获得了样品中体电子，体空穴以及界面电子的迁移率和浓度，通过迁移率谱人地获得的样品中体电子和界面电子随温度的变化规律与理论分的完全吻合。
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| 关 键 词： | 迁移率谱 多载流子体系 汞镉碲 红外探测 |
MOBILITY SPECTRUM ANALYSIS OF MULTI CARRIER SYSTEM IN HgCdTe |
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| GUI Yong,Sheng,ZHENG Guo,Zhen,GUO Shao,Ling,CHU Jun,Hao.MOBILITY SPECTRUM ANALYSIS OF MULTI CARRIER SYSTEM IN HgCdTe[J].Journal of Infrared and Millimeter Waves,1998,17(5):327-332. |
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| Authors: | GUI Yong Sheng ZHENG Guo Zhen GUO Shao Ling CHU Jun Hao |
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| Abstract: | The concentrations and mobilities of bulk electron, bulk hole and interface electron were obtained, respectively, by the mobility specrum analysis (MSA) for n type HgCdTe film grown by MBE and LPE techniques. The changes of concentration and mobility for bulk and interface electrons versus temperature were also derived from the MSA, which agree well with the theoretical analysis. |
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| Keywords: | mobility spectrum multi carrier system HgCdTe |
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