Diffusivity and growth rate of silicon in solid-phase epitaxy with an aluminum medium

Using the classical diffusion equation for an amorphous (a)-Si---Al---Si sandwich structure, we have measured the diffusivity of a-Si in Al between 470–570°C and have derived the mass-transfer coefficient under the equilibrium solid-phase epitaxial growth condition. Our data can be used to explain recent results of junction formation by solid-phase epitaxy. The activation energy of this process is found to be 0.80 eV.