Al掺杂ZnO薄膜的制备及其电学性能研究

采用溶胶-凝胶法在玻璃基底上制备掺杂铝的氧化锌薄膜.研究了不同的铝掺杂浓度、薄膜厚度以及退火温度对电阻率的影响,结果表明掺杂铝摩尔分数为2%、退火温度在550℃时电阻率最低,电阻率随着薄膜厚度的增加而减小.通过XRD和SEM对薄膜的组织结构和形貌进行了表征,结果表明样品表面相对平整、致密,AZO薄膜保持着ZnO六角纤锌矿结构,说明了Al原子对Zn原子的有效替位.

Preparation and Electric Properties of Aluminum-doped ZnO Thin Films

Al-doped ZnO thin films are prepared on glass substrates by sol-gel method,the effect of different Al content,film thickness and annealing temperature on resistivity are discussed,the resistivity decreased with increase of thickness.The results indicate that a minimum resistivity for the film is obtained doping with 2% Al,and annealing at 550℃.The thin films are characterized by scanning electron microscopy and X-ray diffraction.The results prove that the samples are smooth and compact,the AZO thin films has the same crystalline phase as hexagonal wurtzite,that means Al3+displaces Zn2+ effectively.