Comparative analysis of cavity length-dependent temperature sensitivity of GaInNAs quantum dot lasers and quantum well lasers

Self-assembled GaInNAs/GaAsN single-layer quantum dot (QD) lasers, grown using solid source molecular beam epitaxy, have been fabricated and characterized. A high output power of 40.76?mW/facet was obtained from a GaInNAs QD laser with dimensions of 50 × 700?μm(2) at 10?°C. Temperature-dependent measurements were carried out on the GaInNAs QD lasers of different cavity lengths. For comparison, temperature-dependent measurements were also performed on GaInNAs single quantum well (SQW) and triple QW (TQW) lasers. Unlike the relationship between cavity length and T(0) in GaInNAs SQW/TQW lasers, longer-cavity GaInNAs QD lasers (50 × 1700?μm(2)) showed a lower T(0) of 65.1?K, which is believed to be due to non-uniformity of the GaInNAs QD layer. Furthermore, compared to GaInNAs SQW lasers, a significant improvement in temperature sensitivity was observed in the TQW GaInNAs lasers. This is attributed to a reduction in the relative contribution of the Auger recombination current and suppression of heavy-hole leakage in the TQW laser structures.