基于GaAs PIN二极管的宽带大功率单片单刀双掷开关

GaAs PIN二极管具有开态电阻小、截止频率高以及功率容量大的特点,采用GaAs PIN二极管制作的开关插入损耗较小、隔离度较高、并且功率的线性较好。基于河北半导体研究所GaAs PIN工艺制造了一款单刀双掷开关芯片。该开关采用单级并联结构。通过微波在片测试,在小信号条件下,6～18 GHz范围内插入损耗小于1.45 dB、隔离度大于28 dB,输入输出反射损耗小于7.5 dB。把开关装入夹具中进行功率特性测试,在连续波输入功率37 dBm,12 GHz条件下测试输出功率仅压缩0.5 dB,具有非常好的功率特性。在4英寸(100 mm)晶圆上开关的成品率较高,具有非常好的工程应用前景。

Broadband and High-Power Monolithic SPDT Switch Using GaAs PIN Diodes

GaAs PIN diode has the advantages of small on-state resistance,high cut-off frequency and large power capacity.The switch using GaAs PIN diodes has low insertion loss,high isolation and good power linearity.A single pole double throw (SPDT) switch was fabricated based on the GaAs PIN diode MMIC process provided by Hebei Semiconductor Research Institute (HSRI).A parallel single-stage structure was applied for designing the circuit.From 6 GHz to 18 GHz,at small signal,the switch insertion loss is less than 1.45 dB,isolation is greater than 28 dB while the input and output return losses are better than 7.5 dB through on-wafer testing system.The compression of output power is only 0.5 dB at 12 GHz on the condition of a continuous wave (CW) input power of 37 dBm by using test fixture,which proves that the switch has an excellent capability of power handling.The yield of switch is high in 4 inches (100 mm) wafer and the prospect for engineering applications is well.