Metal-semiconductor nanojunctions and their rectification characteristics |
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Authors: | Anindita Bose Kuntal Chatterjee Dipankar Chakravorty |
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Affiliation: | (1) DST Unit on Nano Science, Indian Association for the Cultivation of Science, Kolkata, 700 032, India;(2) Department of Physics, Vidyasagar University, Midnapore, 721 102, India |
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Abstract: | Junctions of silver-copper oxide and silver-zinc oxide, respectively were prepared within the pores of diameters, 20 nm, in anodic aluminium oxide membranes. Voltage-current characteristics were measured over the temperature range 373–573 K which showed rectification behaviour. Using the standard equation the difference between the work functions of the metal and the semiconductor was calculated. This showed a variation with the temperature of measurement. This is explained as arising due to the effect of pressure generated as a result of thermal expansion of the metallic phases concerned between the electrodes. This is consistent with the theoretical prediction of Fermi level shifting of the semiconductor within the bandgap as a function of pressure. Dedicated to Prof. C N R Rao |
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Keywords: | Metal-semiconductor nanojunctions rectification characteristics nanostructure systems single-walled carbon nanotubes |
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