Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors |
| |
| Authors: | Chan WK Cox HM Abeles JH Kelty SP |
| |
| Affiliation: | Bell Communications Research, Red Bank, USA; |
| |
| Abstract: | We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Gao.47Ino.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1?m-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyfT of 19 GHz. |
| |
| Keywords: | |
|
|
