Epitaxial and polycrystalline BaFe12O19 thin films grown by chemical vapour deposition |
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Authors: | S. Pignard H. Vincent J. P. S nateur |
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Affiliation: | Laboratoire des Matériaux et du Génie Physique (UMR 5628 CNRS), Ecole Nationale Supérieure de Physique de Grenoble, BP 46, 38 402 Saint-Martin d'Hères Cedex, France |
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Abstract: | Epitaxial and polycrystalline barium hexaferrite BaFe12O19 thin films were prepared by metalorganic chemical vapour deposition (MOCVD). Films were grown by a liquid MOCVD technique which aim is to control precisely the precursor vapour pressures. Two kinds of substrates were used: sapphire (001) and silicon thermally oxidized. On Si/SiO2 films are polycrystalline and the magnetization is isotropic. On Al2O3 (001), structural studies reveal the films to be predominantly single phase, well crystallized without annealing procedure and with the c-axis perpendicular to the film plane; epitaxial relationships between the film and the substrate were determined. The magnetic parameters, deduced from vibrating sample magnetometer measurements, show a high dependence of the magnetization with the orientation of the field with respect to the surface of the film. |
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Keywords: | Chemical vapor deposition (CVD) Epitaxy Magnetic properties and measurements Structural properties |
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