High frequency performance of Si/sub 1-x/Ge/sub x//Si/sub 1-y/Ge/sub y//Si/sub 1-x/Ge/sub x/ HBTs |
| |
| Authors: | Rosenfeld D. Alterovitz S.A. |
| |
| Affiliation: | NASA-Lewis Res. Center, Cleveland, OH, USA; |
| |
| Abstract: | The results of a theoretical study of the performance of high speed SiGe HBTs is presented. The study includes a group of SiGe HBTs in which the Ge concentration in the base is 20% higher than that in the emitter and collector (i.e. y=x+0.2). It is shown that the composition dependences of f/sub T/ and the F/sub max/ are non-monotonic. As the Ge composition in the emitter and collector layers is increased, f/sub T/ and f/sub max/ first decrease, then remain constant and finally increase to attain their highest values.<> |
| |
| Keywords: | |
|
|
