| 降低晶体管h_（FE）值的电子束辐照工艺的研究 |
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| 引用本文： | 王中央,陈祖良,刘亚建,章月红,陈祖林,施建青,傅建新,尹南勇.降低晶体管h_（FE）值的电子束辐照工艺的研究[J].核技术,1994(4). |
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| 作者姓名： | 王中央 陈祖良 刘亚建 章月红 陈祖林 施建青 傅建新 尹南勇 |
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| 作者单位： | 浙江省技术物理应用研究所，浙江省广播电视工业公司 |
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| 摘 要： | 研究了辐照剂量、剂量率、退火温度、退火时间、辐照方法等因素对晶体管ｈＦＥ值（电流放大倍数）的影响。结果表明，电子束辐照能有效地降低晶体管ｈＦＥ值，并能通过退火处理使其稳定。
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| 关 键 词： | 电子束，辐照，晶体管，h_（FE）值，退火 |
Electron-beam irradiation technology for decreasing the h_(FE) value of transistors |
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| Wang Zhongyang, Chen Zuliang, Liu Yajian, Zhang Yuehong, Chen Zulin, Shi Jianqing, Fu Jianxin.Electron-beam irradiation technology for decreasing the h_(FE) value of transistors[J].Nuclear Techniques,1994(4). |
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| Authors: | Wang Zhongyang Chen Zuliang Liu Yajian Zhang Yuehong Chen Zulin Shi Jianqing Fu Jianxin |
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| Abstract: | Relationships between the hFE value of transistors and irradiation dose, dose rate, annealing temperature, annealing time and irradiation methods are studied. The results show that the hFE value can be decreased effectively by elctron beam irradiation and be stabilized by annealing treatment. |
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| Keywords: | Electron beam Irradiation Transistors h_(FE) value Annealing |
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