Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride |
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Authors: | B. Caussat E. Scheid R. Berjoan |
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Affiliation: | a LGC/ENSIACET, UMR CNRS 5503, 5 rue Paulin Talabot, BP1301, 31106 Toulouse Cedex 1, France b LAAS, UPR CNRS 8001, 7 avenue du Colonel Roche, 31077 Toulouse Cedex, France c CEMES, UPR CNRS 8011, 29 rue Jeanne Marvig, 31055 Toulouse Cedex, France d ISGMP, UPR CNRS 8521, Odeillo, BP5, 66125 Font Romeu, France |
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Abstract: | ![]() The deposition of in situ boron doped silicon films from boron trichloride BCl3 and silane SiH4 in a conventional low-pressure chemical vapour deposition reactor has been studied for high boron doping levels and two kinds of substrates (SiO2 and Si3N4). On the basis of transmission electron microscopy and X-ray photoelectron spectroscopy results, these films appear to be highly sensitive to the local electronic environment of both substrate and deposited atoms. Indeed, beyond a critical doping level, this material becomes more and more amorphous, due to the occurrence of a particular organization of boron atoms in the silicon matrix. This behaviour results in a lowering of the well-known boron enhancement effect for deposition rate and crystalline fraction. |
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Keywords: | CVD In situ boron doped silicon X-ray photoelectron spectroscopy Microelectronics |
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