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Effect of target compositions on the crystallinity of β-FeSi2 prepared by ion beam sputter deposition method |
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| Authors: | K Yamaguchi A Heya T Katsumata K Hojou |
| Affiliation: | a Tokai Research Establishment, Japan Atomic Energy Research Institute, 2-4 Shirakata-Shirane, Tokai-mura, Ibaraki-ken 319-1195, Japan b Industrial Research Institute of Ishikawa, 2-1 Kuratsuki, Kanazawa 920-8203, Japan c Graduate School of Science and Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi 316-8511, Japan |
| Abstract: | Targets with the elemental composition of Fe, Fe2Si and FeSi2 were employed in the present study to grow β-FeSi2 film on Si (100) substrate by means of ion beam sputter deposition (IBSD) method. The results revealed that when FeSi2 target was employed, a Si-rich phase, α-FeSi2 (Fe2Si5), was predominant at temperatures above 973 K, while β-FeSi2 phase was observed only in the limited temperature range at around 873 K. In this case, Si was originated both from the sputtered target and the substrate, thus, the supply of Si was considered to be excessive to sustain β structure. On the other hand, the films prepared with Fe target became polycrystalline as they grow thicker than 100 nm. In order to optimize the supply of Fe and Si for epitaxial growth, Fe2Si target was employed, where highly (100)-oriented β-FeSi2 layer of 120 nm in thickness was obtained at 973 K. |
| Keywords: | Ion beam sputter deposition β-FeSi2 Crystal structure Target compositions |
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