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Effects of step-edge conditions on the magnetoresistance of La0.7Sr0.3MnO3 tunneling junctions |
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| Authors: | L.M. Wang Chen-Chung Liu H.E. Horng |
| Affiliation: | a Department of Electrical Engineering, Da-Yeh University, Shia-Jau Rd, Chang-Hwa 515, Taiwan, ROC b Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC c Department of Physics, National Taiwan Normal University, Taipei 117, Taiwan, ROC |
| Abstract: | La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO3 substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions. |
| Keywords: | Atomic force microscopy Electrical properties and measurements Sputtering Tunneling |
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