Voltage distribution in n+-n-n+and metal-cathode n-n+GaAs X-band oscillators using a SEM

Time-averaged and dynamic results have been obtained in n⁺-n-n⁺and metal cathode n-n⁺GaAsX-band devices, using a new voltage measurement scheme in the SEM. The n⁺-n-n⁺devices show accumulation layer propagation, and the metal-cathode devices show a trapped dipole domain behavior.