| X波段砷化镓场效应管介质振荡器 |
| |
| 引用本文： | 徐旭,王绍熙. X波段砷化镓场效应管介质振荡器[J]. 固体电子学研究与进展, 1985, 0(1) |
| |
| 作者姓名： | 徐旭 王绍熙 |
| |
| 作者单位： | 南京固体器件研究所(徐旭)，南京固体器件研究所(王绍熙) |
| |
| 摘 要： | 本文介绍了反馈型介质振荡器,给出了介质谐振器尺寸的计算方法.该振荡器在8GHz下,温度范围-40～+70℃,频率稳定度为0.6ppm/℃,输出功率16～30mW,在+55℃下连续工作8 小时,频率漂移小于50kHz,推频系数小于10kHz/V,在偏离载频100kHz的FM噪声为-110dBc/Hz.该振荡器在无人值守中继系统中作上下变频器的本振源,使用良好.这类振荡器在10.7GHz下,温度范围-40～+55℃,频率稳定度0.6ppm/℃,输出功率大于5mW.
|
X-Band GaAs FET Dielectric Oscillator |
| |
| Abstract: | This paper presents a feed-back dielectric oscillator and a method of calculating its dimension. At 8GHz, the oscillator features the temperature range of -40 -+ 70℃, the frequency stability of 0.6ppm/℃, the output power of 16-30mW, the frequency shift and push frequency coefficient less than 50kHz and lOkHz/V, respectively,while it continuously operates 8 hours at +55℃ and FM noise figure from 100kHz carrier frequency is -110dBc/Hz. The oscillator work smoothly as a local pump of uper and down-converters in an unattenede relay system. At 10.7GHz the oscillator exhibits the temperature range of-40- +55℃, frequency stability of 0.6ppm/℃ and the output power of 5mW. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
