Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact |
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Authors: | Song JO Jun-Seok Ha Tae-Yeon Seong |
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Affiliation: | Dept. of LED Bus., LG Innotek (LGIT), Gwangju, South Korea; |
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Abstract: | GaN-based semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further improvement of LED performance can be achieved through the enhancement of external quantum efficiency. In this regard, high-quality p-type ohmic electrodes having low contact resistance and high transmittance (or reflectivity), along with thermal stability, must be developed because p-type ohmic contacts play a key role in the performance of LEDs. In this paper, we review recent advances in p-type ohmic-contact technology for GaN-based LEDs. A variety of methods for forming transparent and reflective ohmic contacts are introduced. |
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