| HPM作用下27系列EPROM存储器失效的实验研究 |
| |
| 引用本文： | 黄卡玛,熊国安.HPM作用下27系列EPROM存储器失效的实验研究[J].电波科学学报,1996,11(4):45-49. |
| |
| 作者姓名： | 黄卡玛 熊国安 |
| |
| 作者单位： | 四川大学无线电系 |
| |
| 基金项目： | 863激光技术青年基金 |
| |
| 摘 要： | 在高功率微波辐射下，２７系列ＥＰＲＯＭ存储器呈现出暂时失效及永久失效两种情况。进一步的研究表明，在较低功率密度电磁波辐射下，器件失效的主要原因是场的作用；
|
| 关 键 词： | 高功率微波 存储器 微波霍耳场 EPROM |
The Experimental Study of the Series of 27-EPROM Memory Failure under the Radiation of High Power Microwave(HPM) |
| |
| Huang Kama,Xiong Guoan,Huang Jianhua, Liu Yongqing,Tang Jingxian.The Experimental Study of the Series of 27-EPROM Memory Failure under the Radiation of High Power Microwave(HPM)[J].Chinese Journal of Radio Science,1996,11(4):45-49. |
| |
| Authors: | Huang Kama Xiong Guoan Huang Jianhua Liu Yongqing Tang Jingxian |
| |
| Abstract: | Under the radiation of high POwer microwave(HPM)the series of 27--EPROM present temporaryand Permanent failure. The further investigation indicates that the failure of devices is mainly caused by the field effect under the low power density radiation of microwave and caused by not only the field effect but also the heatingeffect under the high power density radiation of microwave.The field effect is produced through the microwave Halleffect in semiconductor. |
| |
| Keywords: | High power microwave Memory Failure Microwave Hall effect |
| 本文献已被 CNKI 维普 等数据库收录！ |
