首页 | 本学科首页   官方微博 | 高级检索  
     


Performance improvement of DC-DC converter using L-D-based modified GaN-FET driver
Authors:Subhendu Bikash Santra  Aratrika Roy  Tanmoy Roy Choudhury  Debashis Chatterjee  Byamakesh Nayak
Affiliation:1. School of Electrical Engineering, KIIT University, Bhubaneswar, India;2. Department of Electrical Engineering, Jadavpur University, Kolkata, India
Abstract:Bootstrap capacitor in FET gate driver plays an important role in the transient performance of the half bridge configured synchronous buck DC-DC converter especially in the top switch. In this paper, a new bootstrap capacitor based GaN-FET driver is proposed. This new GaN-FET driver is tested in a synchronous buck converter for performance verification like urn:x-wiley:00989886:media:cta2787:cta2787-math-0001 immunity, transient response, and voltage ringing. A comparison study with the existing LM5113 (Texas Instrument)–based driver for GaN-FET and IR2110-based Si-MOSFET driver on a DC-DC converter is carried out to show the performance improvement using the proposed GaN-FET driver. The simulation study is performed on spice-based NI-Multisim 14.1. Finally, the designed GaN-FET driver is tested on a 60-W synchronous buck DC-DC converter in open-loop and closed-loop configuration.
Keywords:bootstrap capacitor  DC-DC converter  GaN-FET
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号