Characteristics of MIS capacitors based on multilayer TiO2–Ta2O5 structures

We report electrical characteristics of multilayer TiO₂–T₂O₅ based MIS structures obtained by simple electron beam evaporation and annealed in an O₂ environment. We describe parameter dependence on annealing conditions and demonstrate an equivalent SiO₂ thickness of 3 nm with a leakage current density of 10⁻⁷ A/cm² at an electric field of 10⁶ V/cm.